DocumentCode :
1324561
Title :
Novel fabrication method of 120 nm period gratings using ECR-CVD SiNx films
Author :
Sugimoto, H. ; Abe, Y. ; Matsui, T. ; Ogata, H.
Author_Institution :
Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
24
Issue :
14
fYear :
1988
fDate :
7/7/1988 12:00:00 AM
Firstpage :
842
Lastpage :
843
Abstract :
120 nm period gratings were fabricated by a novel method using ECR-CVD SiNx films. SiNx films deposited on photoresist have a higher etching rate than that on the flat semiconductor substrate. Good use of this difference was made to fabricate gratings whose period is one-half that of the original, formed by a holographic exposure technique
Keywords :
chemical vapour deposition; diffraction gratings; distributed feedback lasers; etching; silicon compounds; 120 nm; CVD; ECR; SiNx films; etching rate; fabrication method; gratings; holographic exposure technique; photoresist;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
8371
Link To Document :
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