• DocumentCode
    1324561
  • Title

    Novel fabrication method of 120 nm period gratings using ECR-CVD SiNx films

  • Author

    Sugimoto, H. ; Abe, Y. ; Matsui, T. ; Ogata, H.

  • Author_Institution
    Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    24
  • Issue
    14
  • fYear
    1988
  • fDate
    7/7/1988 12:00:00 AM
  • Firstpage
    842
  • Lastpage
    843
  • Abstract
    120 nm period gratings were fabricated by a novel method using ECR-CVD SiNx films. SiNx films deposited on photoresist have a higher etching rate than that on the flat semiconductor substrate. Good use of this difference was made to fabricate gratings whose period is one-half that of the original, formed by a holographic exposure technique
  • Keywords
    chemical vapour deposition; diffraction gratings; distributed feedback lasers; etching; silicon compounds; 120 nm; CVD; ECR; SiNx films; etching rate; fabrication method; gratings; holographic exposure technique; photoresist;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1324561