Title :
In0.52Al0.48As/InxGa1-x As (0.53⩽x⩽0.70) lattice-matched and strained heterostructure insulated-gate FETs
Author :
Chan, Yi-Jen ; Pavlidis, Dimltris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
The DC and microwave properties of In0.52Al0.48 Al/InxGa1-xAs (0.53⩽x⩽0.70) heterostructure insulated gate field-effect transistors (HIGFETs) with a quantum well channel design are presented. DC and microwave transconductances (gm) are enhanced as the In content is increased in the InGaAs channel. An intrinsic microwave g m value of 428 mS/mm and a K-factor of 1140 mS/mm-V have been obtained for 1.0-μm gate length with the 65% In channel devices. The sheet charge density, drift mobility, transconductance, current-gain cutoff frequency (fT), and maximum oscillation frequency (f max) all show a continuous improvement up to 65% In content ( fT=22.5 GHz with 53% and fT=27 GHz with 65% In; the corresponding fmax change is from 6.5 to 8 GHz). The device performance degrades as the In content is increased to 70%. DC and microwave characteristics show the presence of negative differential resistance (NDR) up to 2.7 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; negative resistance; solid-state microwave devices; 1 micron; 22.5 to 27 GHz; 428 mS; 6.5 to 8 GHz; DC properties; HIGFETs; In0.52Al0.48As-InxGa1-x As; K-factor; current-gain cutoff frequency; drift mobility; gate length; heterostructure insulated gate field-effect transistors; lattice matching; maximum oscillation frequency; microwave properties; negative differential resistance; quantum well channel design; sheet charge density; strained heterostructure; transconductance; Cutoff frequency; Degradation; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; Microwave devices; Student members; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
