Title :
An optimized 850°C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process
Author :
Gross, B. Jeffrey ; Krisch, Kathy S. ; Sodini, Charles G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850°C by low-pressure furnace nitridation of SiO2 followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily scalable from 950°C to 850°C through the use of higher partial pressures in the nitridation and reoxidation steps, resulting in the same quality dielectric formed with a lower Dt product. Electrical characterization results of capacitors and transistors with the 850°C ROXNOX dielectric are presented. Reliability of the 850°C ROXNOX dielectric is demonstrated through Fowler-Nordheim and channel hot-electron stressing results
Keywords :
dielectric thin films; insulated gate field effect transistors; metal-insulator-semiconductor devices; nitridation; oxidation; semiconductor technology; 850 degC; Fowler Nordheim measurement; MOS gate dielectrics; ROXNOX process; SiO2-SiOxNy; capacitors; channel hot-electron stressing; electrical characteristics; low pressure furnace reoxidized nitrided oxide process; low-pressure furnace nitridation; partial pressures; reliability; reoxidation; transistors; Annealing; Capacitors; Degradation; Dielectrics; Electron traps; Furnaces; Interface states; MOSFETs; Stability; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
