DocumentCode :
1324653
Title :
Laser-induced melting of thin conducting films. I. The adiabatic approximation
Author :
Cohen, Simon S. ; Wyatt, Peter W. ; Chapman, Glenn H.
Author_Institution :
MIT, Lincoln Lab., Lexington, MA, USA
Volume :
38
Issue :
9
fYear :
1991
fDate :
9/1/1991 12:00:00 AM
Firstpage :
2042
Lastpage :
2050
Abstract :
The authors explore the thermal characteristics of an isolated metallic film which is subjected to a short pulse of laser radiation. The main feature of such an adiabatic system is that no steady-state solution is possible. This means that the molten zone dimensions depend on the pulse duration length and also on the temperature dependence of the influencing parameters (essentially, the thermal diffusivity). The authors use available models for the temperature-dependent conductivity and diffusivity to compare the theoretical results with experimental data obtained from a quasi-adiabatic system
Keywords :
laser beam effects; melting; metallic thin films; metallisation; thermal diffusivity; adiabatic approximation; isolated metallic film; laser induced melting; molten zone dimensions; pulse duration length; temperature dependence; temperature-dependent conductivity; thermal characteristics; thermal diffusivity; thin conducting films; Conductive films; Fuses; Integrated circuit technology; Laser applications; Laser beam cutting; Laser beams; Laser modes; Laser theory; Optical pulses; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.83728
Filename :
83728
Link To Document :
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