DocumentCode :
1324693
Title :
Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectors
Author :
Sano, Eiichi
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Volume :
38
Issue :
9
fYear :
1991
fDate :
9/1/1991 12:00:00 AM
Firstpage :
2075
Lastpage :
2081
Abstract :
Pulse responses of top-illuminated GaAs metal-semiconductor-metal photodetectors (MSM PDs) are evaluated by using a two-dimensional ensemble Monte Carlo technique. Fundamental assumptions and the model used for the evaluation are detailed. Pulsewidths for MSM PDs are presented as functions of the gap length between metal electrodes and the photon energy of optical pulses. It is also shown that reducing the thickness of the absorption region is very effective for shortening the pulsewidth of MSM PDs
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; metal-semiconductor-metal structures; photodetectors; semiconductor device models; GaAs; MSM detectors; gap length; metal electrodes; metal-semiconductor-metal photodetectors; model; optical pulses; photon energy; pulse responses; submicron device; top illuminated devices; two-dimensional ensemble Monte Carlo technique; Circuits; Electrodes; Gallium arsenide; Monte Carlo methods; Optical pulses; Optical receivers; Parasitic capacitance; Photodetectors; Sampling methods; Semiconductor materials;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.83733
Filename :
83733
Link To Document :
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