Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectors

Author

Sano, Eiichi

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

38

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

2075

Lastpage

2081

Abstract

Pulse responses of top-illuminated GaAs metal-semiconductor-metal photodetectors (MSM PDs) are evaluated by using a two-dimensional ensemble Monte Carlo technique. Fundamental assumptions and the model used for the evaluation are detailed. Pulsewidths for MSM PDs are presented as functions of the gap length between metal electrodes and the photon energy of optical pulses. It is also shown that reducing the thickness of the absorption region is very effective for shortening the pulsewidth of MSM PDs

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; metal-semiconductor-metal structures; photodetectors; semiconductor device models; GaAs; MSM detectors; gap length; metal electrodes; metal-semiconductor-metal photodetectors; model; optical pulses; photon energy; pulse responses; submicron device; top illuminated devices; two-dimensional ensemble Monte Carlo technique; Circuits; Electrodes; Gallium arsenide; Monte Carlo methods; Optical pulses; Optical receivers; Parasitic capacitance; Photodetectors; Sampling methods; Semiconductor materials;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.83733

Filename

83733