Title :
New observation of gate current in off-state MOSFET
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fDate :
9/1/1991 12:00:00 AM
Abstract :
For a gate-controlled p+-n diode having gate-p+ overlap area of 3.7×10-4 cm2, the author reports a new observation of the leakage currents through a 235-Å gate oxide. The gate current components both due to Fowler-Nordheim electron funneling through the gate-p+ overlap oxide and due to hot-electron injections were separately detected. The corresponding gate current was found to be dominated by Fowler-Nordheim electron funneling prior to significant surface avalanche impact ionization
Keywords :
hot carriers; impact ionisation; insulated gate field effect transistors; leakage currents; tunnelling; 235 Å; Fowler-Nordheim electron funneling; MOSFET; gate current; gate-controlled p+-n diode; gate-p+ overlap oxide; hot-electron injections; leakage currents; offstate device; surface avalanche impact ionization; Current measurement; Diodes; Doping; Electrons; Leakage current; MOSFET circuits; Surface resistance; Temperature; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
