Junction breakdown instabilities in deep trench isolation structures

Author

Tsang, Yuk L. ; Aitken, John M.

Author_Institution

IBM Corp., Hopewell Junction, NY, USA

Volume

38

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

2134

Lastpage

2138

Abstract

Junction breakdown voltage instability in a p-n junction formed in bulk silicon adjacent to a deep trench filled with polysilicon was investigated. The structure investigated consists of a 5-μm-deep trench filled with heavily p-doped polysilicon. The trench is open at the bottom and is consequently shorted to the p-substrate. The time-dependent behavior of the walkout or the breakdown voltage instability is similar to that reported for planar p-n junctions terminating on surface oxide. Results suggest that trapping of holes in the trench sidewall dielectric is responsible for this phenomenon. The product of trapping center concentration and capture cross section N σ is estimated to be 90 cm^-1

Keywords

bipolar integrated circuits; electric breakdown of solids; hole traps; integrated circuit technology; stability; breakdown voltage instability; bulk Si; capture cross section; deep trench isolation structures; heavily p-doped polysilicon; high speed bipolar technology; junction breakdown; p-n junction; p-substrate; time-dependent behavior; trapping center concentration; trench sidewall dielectric; Art; Avalanche breakdown; Breakdown voltage; Contacts; Dielectrics; Diodes; Electric breakdown; Isolation technology; P-n junctions; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.83741

Filename

83741