DocumentCode :
132502
Title :
SiC BJT-based full-ZCS quasi-resonant converter with improved efficiency for induction heating applications
Author :
Sarnago, Hector ; Lucia, O. ; Mediano, Arturo ; Burdio, Jose M.
Author_Institution :
Dept. of Electron. Eng. & Commun., Univ. of Zaragoza. Zaragoza, Zaragoza, Spain
fYear :
2014
fDate :
16-20 March 2014
Firstpage :
852
Lastpage :
856
Abstract :
SiC devices exhibits improved performances in terms of switching speed and reduced on-state voltage drop, especially if a high-voltage and high-temperature environment is considered. In this paper the impact and opportunities of using high-voltage SiC switching devices in a pulsed power supply oriented to domestic induction heating applications is analyzed. Considering the converter requirements, SiC BJT devices results the most appropriated technology, improving the efficiency and the reliability. The proposed converter has been experimentally verified and, additionally, a specific activation circuit to improve its efficiency is proposed.
Keywords :
induction heating; power bipolar transistors; resonant power convertors; silicon compounds; wide band gap semiconductors; zero current switching; BJT-based full-ZCS quasi-resonant converter; SiC; domestic induction heating applications; high-voltage switching devices; on-state voltage drop reduction; pulsed power supply; Electromagnetic heating; Performance evaluation; Power generation; Resonant inverters; Silicon carbide; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
Type :
conf
DOI :
10.1109/APEC.2014.6803407
Filename :
6803407
Link To Document :
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