SiC BJT-based full-ZCS quasi-resonant converter with improved efficiency for induction heating applications

Author

Sarnago, Hector ; Lucia, O. ; Mediano, Arturo ; Burdio, Jose M.

Author_Institution

Dept. of Electron. Eng. & Commun., Univ. of Zaragoza. Zaragoza, Zaragoza, Spain

fYear

2014

fDate

16-20 March 2014

Firstpage

852

Lastpage

856

Abstract

SiC devices exhibits improved performances in terms of switching speed and reduced on-state voltage drop, especially if a high-voltage and high-temperature environment is considered. In this paper the impact and opportunities of using high-voltage SiC switching devices in a pulsed power supply oriented to domestic induction heating applications is analyzed. Considering the converter requirements, SiC BJT devices results the most appropriated technology, improving the efficiency and the reliability. The proposed converter has been experimentally verified and, additionally, a specific activation circuit to improve its efficiency is proposed.

Keywords

induction heating; power bipolar transistors; resonant power convertors; silicon compounds; wide band gap semiconductors; zero current switching; BJT-based full-ZCS quasi-resonant converter; SiC; domestic induction heating applications; high-voltage switching devices; on-state voltage drop reduction; pulsed power supply; Electromagnetic heating; Performance evaluation; Power generation; Resonant inverters; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Conference_Location

Fort Worth, TX

Type

conf

DOI

10.1109/APEC.2014.6803407

Filename

6803407