Title :
Low temperature oxidation of silicon
Author :
Madani, M.R. ; Ajmera, P.K.
Author_Institution :
Louisiana State Univ., Baton Rouge, LA, USA
fDate :
7/7/1988 12:00:00 AM
Abstract :
Oxidation of silicon in dry oxygen ambient at temperatures between 25°C to 500°C, with a point-to-plane corona discharge is studied. The oxidation rate for this case is a strong function of temperature and is found to increase significantly in comparison to the conventional thermal oxidation rate. For the thicker films, refractive index of the grown oxide layer approaches the value obtained for high-temperature thermally grown oxide
Keywords :
elemental semiconductors; oxidation; semiconductor technology; silicon; 25 to 500 C; Si oxidation; SiO2 growth; dry O2 ambient; function of temperature; low temperature oxidation; oxidation rate; oxide thickness; point-to-plane corona discharge; refractive index; semiconductors; thicker films;
Journal_Title :
Electronics Letters
