• DocumentCode
    1325364
  • Title

    Spatio-temporal development of surface charges on spacers stressed with DC voltages

  • Author

    Bektas, S.I.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Middle East Tech. Univ., Ankara, Turkey
  • Volume
    25
  • Issue
    3
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    515
  • Lastpage
    520
  • Abstract
    The development of surface charge on a right-cylindrical spacer under different DC stress levels is measured in SF6 for several hours. The DC voltage stress levels are below the stresses where partial discharges with AC voltage generally occur. The measurements indicate that charges are mainly deposited on one side only of the spacer and are predominantly of opposite polarity to that of the applied voltage. The charge and its area increase with time and saturate. Typical saturation times are approximately 3 and 9 h for 10 kV and 5 kV respectively. Magnitudes of saturated charge increase linearly with applied voltage. Various factors which may affect charge accumulation pattern are investigated. Measurements show that charge deposition on a spacer are influenced insignificantly by γ-irradiation or a change of gas from SF6 to air. However, charge depositions are influenced by surface conductance of the spacer. The charging of the spacer is negligible when stressed with AC and impulse voltages with peak voltages in a range similar to the DC levels used
  • Keywords
    gaseous insulation; impulse testing; sulphur compounds; surface discharges; 10 kV; 3 h; 5 kV; 9 h; DC voltages; SF6; charge accumulation pattern; charge deposition; impulse voltages; saturated charge; saturation times; spacers; surface charges; surface conductance; voltage stress levels; Charge measurement; Current measurement; Electrodes; Gas insulation; Helium; Probes; Stress measurement; Sulfur hexafluoride; Surface charging; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/14.55725
  • Filename
    55725