Title :
Behavioral IGBT modeling for predicting high frequency effects in motor drives
Author :
Tichenor, Jerry L. ; Sudhoff, Scott D. ; Drewniak, James L.
Author_Institution :
Dept. of Electr. Eng., Missouri Univ., Rolla, MO, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients
Keywords :
high-frequency effects; insulated gate bipolar transistors; motor drives; semiconductor device models; transients; IGBT modeling; first-order behavioral IGBT/gate drive model; hardware measurements; high frequency effects prediction; model parameters derivation; motor drives; turn-off transients prediction; turn-on transients prediction; Circuit simulation; Computational modeling; Electromagnetic transients; Frequency; Insulated gate bipolar transistors; Motor drives; Power semiconductor switches; Power system modeling; Predictive models; Semiconductor devices;
Journal_Title :
Power Electronics, IEEE Transactions on
