Silicon dioxide films fabricated by electron cyclotron resonant microwave plasmas

High-quality silicon dioxide films are deposited on a silicon ⟨100⟩ substrate from an electron cyclotron resonant microwave plasma under the following conditions: substrate temperatures of 150 to 320°C, flow rates of 1.0 sccm of 10% SiH₄ in Ar and 5.0 sccm of O₂, 5 W (0.16 W/cm²) absorbed power, and a pressure of 0.3 Pa. Films are determined to be stoichiometric, of high density, having good bonding properties, and most importantly of excellent electrical integrity. A minimum deposition temperature required for good electrical properties appears to be about 285°C for the deposition conditions used. Films deposited under optimal conditions have spectra nearly identical to those of thermally grown silicon oxides and an index of refraction of 1.456, as measured by ellipsometry. It is concluded that using an electron cyclotron resonant microwave plasma. SiO₂ films with physical and electronic properties comparable to thermally grown oxides can be deposited at low temperature (350°C) and low pressure (0.1 Pa)