DocumentCode :
1325647
Title :
One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applications
Author :
Dungan, Thomas E. ; Neudeck, Philip G. ; Melloch, Michael R. ; Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
37
Issue :
7
fYear :
1990
fDate :
7/1/1990 12:00:00 AM
Firstpage :
1599
Lastpage :
1607
Abstract :
Theoretical and experimental work that presents the possibility for a high-speed, low-power one-transistor room-temperature dynamic RAM (DRAM) technology in GaAs is discussed. Isolated storage capacitors have demonstrated over 20 min of storage time at room temperature with charge densities comparable to that obtained with planar silicon technology. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above. The standby power dissipation of these first cells is only a small fraction of the power dissipated by the best commercial GaAs static RAM (SRAM) cells
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated memory circuits; junction gate field effect transistors; random-access storage; GaAs; JFET-accessed dynamic RAM cells; MESFET-accessed dynamic RAM cells; charge densities; medium density applications; one-transistor cells; room-temperature dynamic RAM; standby power dissipation; storage capacitors; storage time; Capacitors; DRAM chips; Gallium arsenide; Integrated circuit technology; Isolation technology; MESFETs; Power dissipation; Read-write memory; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.55743
Filename :
55743
Link To Document :
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