One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applications

Author

Dungan, Thomas E. ; Neudeck, Philip G. ; Melloch, Michael R. ; Cooper, James A., Jr.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1599

Lastpage

1607

Abstract

Theoretical and experimental work that presents the possibility for a high-speed, low-power one-transistor room-temperature dynamic RAM (DRAM) technology in GaAs is discussed. Isolated storage capacitors have demonstrated over 20 min of storage time at room temperature with charge densities comparable to that obtained with planar silicon technology. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above. The standby power dissipation of these first cells is only a small fraction of the power dissipated by the best commercial GaAs static RAM (SRAM) cells

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated memory circuits; junction gate field effect transistors; random-access storage; GaAs; JFET-accessed dynamic RAM cells; MESFET-accessed dynamic RAM cells; charge densities; medium density applications; one-transistor cells; room-temperature dynamic RAM; standby power dissipation; storage capacitors; storage time; Capacitors; DRAM chips; Gallium arsenide; Integrated circuit technology; Isolation technology; MESFETs; Power dissipation; Read-write memory; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55743

Filename

55743