DocumentCode :
1325707
Title :
Photoconductive semiconductor switches
Author :
Loubriel, Guillermo M. ; Zutavern, Fred J. ; Baca, Albert G. ; Hjalmarson, H.P. ; Plut, Tom A. ; Helgeson, Wesley D. ; Malley, Martin W O ; Ruebush, Mitchell H. ; Brown, Darwin J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
25
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
124
Lastpage :
130
Abstract :
Optically activated GaAs switches operated in their high-gain mode are being used or tested for pulsed power applications as diverse as low-impedance, high-current firing sets in munitions; high impedance, low-current Pockels cell or Q-switch drivers for lasers; high-voltage drivers for laser diode arrays; high-voltage, high-current, compact accelerators; and pulsers for ground penetrating radar. This paper will describe the properties of high-gain photoconductive semiconductor switches (PCSS), and how they are used in a variety of pulsed power applications. For firing sets, we have switched up to 7 kA in a very compact package. For driving Q switches, the load is the small (30 pF) capacitance of the Q switch which is charged to 6 kV. We have demonstrated that we can modulate a laser beam with a subnanosecond rise time. Using PCSS, we have demonstrated gain switching a series-connected laser diode array, obtaining an optical output with a peak power of 50 kW and a pulse duration of 100 ps. For accelerators, we are using PCSS to switch a 260 kV, 60 kA Blumlein. A pulser suitable for use in ground-penetrating radar has been demonstrated at 100 kV, 1.3 kA. This paper will describe the specific project requirements and switch parameters in all of these applications, and emphasize the switch research and development that is being pursued to address the important issues
Keywords :
III-V semiconductors; Q-switching; capacitance; driver circuits; gallium arsenide; photoconducting devices; photoconducting switches; pulsed power switches; radar; weapons; 1.3 kA; 100 kV; 100 ps; 260 kV; 30 pF; 40 kW; 6 kV; 60 kA; 7 kA; GaAs; Q-switch drivers; capacitance; ground penetrating radar; high impedance low-current Pockels cell; high-gain mode; high-voltage drivers; high-voltage high-current, compact accelerators; laser beam modulation; laser diode arrays; laser drivers; low-impedance high-current firing sets; munitions; optical output; optically activated GaAs switches; peak power; photoconductive semiconductor switches; project requirements; pulse duration; pulsed power applications; pulsers; series-connected laser diode array; subnanosecond rise time; switch parameters; Diode lasers; Ground penetrating radar; Laser radar; Optical arrays; Optical modulation; Optical pulses; Optical switches; Photoconducting devices; Power semiconductor switches; Semiconductor laser arrays;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/27.602482
Filename :
602482
Link To Document :
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