Integration of 1024 InGaAsP/InP optoelectronic bistable switches

Author

Matsuda, Kenichi ; Takimoto, Kyoko ; Lee, Doo-hwan ; Shibata, Jun

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1630

Lastpage

1634

Abstract

A photonic parallel memory (PPM), which is an array of 32×32 optoelectronic bistable switches, is discussed. The switch consists of a heterojunction phototransistor (HPT) and a light-emitting diode (LED). Optical positive feedback from LED to HPT is the cause of bistability. The PPM can be written in and read out with 1-kb parallel optical signals. The PPM has been fabricated and memory operation has been demonstrated as expected. Dissipation current for a single switch and the input optical power necessary to turn on the switch were 600 μA and 20 μW, respectively. A light pulse with a width of 5 ns was able to turn on the switch, and the product of turn-on power and pulsewidth for the short pulse region was 1.5 pJ

Keywords

gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; optical storage; optical switches; phototransistors; 20 muW; 600 muA; InGaAsP-InP; heterojunction phototransistor; input optical power; light pulse; light-emitting diode; optoelectronic bistable switches; parallel optical signals; photonic parallel memory; positive feedback; pulsewidth; turn-on power; High speed optical techniques; Indium phosphide; Integrated optics; Light emitting diodes; Optical arrays; Optical bistability; Optical feedback; Optical pulses; Optical switches; Stimulated emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55749

Filename

55749