DocumentCode
1325792
Title
High-performance HEMT amplifiers with a simple low-loss matching network
Author
Peter, R. ; Schneider, M.V. ; Wu, Y.S.
Author_Institution
Inst. of Appl. Phys., Bern Univ., Switzerland
Volume
39
Issue
9
fYear
1991
fDate
9/1/1991 12:00:00 AM
Firstpage
1673
Lastpage
1675
Abstract
A report is presented on the design and performance of a K -band high electron mobility transistor (HEMT) amplifier whose passive circuit consists of low-loss suspended stripline elements. Single-stage amplifiers were built at 4 GHz and 22 GHz by using readily available commercial HEMT devices. In the desired frequency range from 21 to 23 GHz for the high-frequency design, the best spot noise temperatures were 150 K and 65 K at 21.5 GHz for room and liquid nitrogen temperatures, respectively
Keywords
high electron mobility transistors; impedance matching; microwave amplifiers; solid-state microwave circuits; 22 GHz; 4 GHz; HEMT amplifiers; K-band; SHF; high electron mobility transistor; low-loss matching network; passive circuit; single-stage amplifiers; suspended stripline elements; Circuit noise; Dielectric losses; Dielectric substrates; Frequency; HEMTs; K-band; Microstrip; Stripline; Temperature distribution; Temperature sensors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.83848
Filename
83848
Link To Document