Title :
Projecting gate oxide reliability and optimizing reliability screens
Author :
Moazzami, Reza ; Hu, Chenming
Author_Institution :
Dept. of Electr. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
The effect of time-dependent stress voltage and temperature on the reliability of thin SiO2 films is incorporated in a quantitative defect-induced breakdown model. Based on this model, design curves which can be used along with a breakdown voltage distribution for an oxide technology to determine optimal burn-in conditions are presented. The tradeoff between improved reliability and lower burn-in yield for different gate oxide technologies can also be examined quantitatively using the model
Keywords :
MOS integrated circuits; circuit reliability; insulating thin films; metal-insulator-semiconductor structures; silicon compounds; SiO2 films; breakdown voltage distribution; burn-in yield; design curves; gate oxide reliability; optimal burn-in conditions; oxide technology; quantitative defect-induced breakdown model; reliability screens; temperature; time-dependent stress voltage; Breakdown voltage; Circuits; Dielectric breakdown; Electric breakdown; Life estimation; Predictive models; Stress; Temperature distribution; Testing; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
