Parameter variations in MOS CAM with a mutual inhibition network

Author

Johnson, Louis G. ; Jalaleddine, Sateh M S

Author_Institution

Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA

Volume

38

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

1021

Lastpage

1029

Abstract

A MOS implementation of mutual inhibition is combined with a standard content addressable memory (CAM) to produce a relaxative content addressable memory (RCAM) that automatically relaxes to the nearest match to an input. The operation of the RCAM is similar to the Hamming neural net. A simplified transistor model is employed to obtain a closed-form solution for the convergence time of the circuit, which can be used to design the circuit to meet specific performance goals. The model is used to find the settle time and the effects of parameter variation on the validity of the output. Chips were fabricated using 2-μm double metal CMOS technology through MOSIS

Keywords

CMOS integrated circuits; content-addressable storage; integrated memory circuits; memory architecture; neural nets; piecewise-linear techniques; semiconductor device models; 2 micron; MOS CAM; MOSIS; closed-form solution; content addressable memory; convergence time; double metal CMOS technology; mutual inhibition network; parameter variation; piecewise-linear model; relaxative CAM; settle time; transistor model; Associative memory; CADCAM; CMOS technology; Circuits; Computer aided manufacturing; Impedance matching; Intelligent networks; Logic design; Neural networks; Semiconductor device modeling;

fLanguage

English

Journal_Title

Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0098-4094

Type

jour

DOI

10.1109/31.83873

Filename

83873