DocumentCode
1325918
Title
High performance GaAs MESFETs grown on InP substrates by MOCVD
Author
Lo, Y.H. ; Bhat, Ritesh ; Lee, T.P.
Author_Institution
Bell Commun. Res., Red Bank, NJ
Volume
24
Issue
14
fYear
1988
fDate
7/7/1988 12:00:00 AM
Firstpage
865
Lastpage
866
Abstract
1 μm gate GaAs MESFETs with AlGaAs/GaAs buffer layers were grown on (100) InP substrates by low-pressure MOCVD. The linewidth of the X-ray rocking curve on this material is 315 arc seconds. Device transconductance of 220 mS/mm and output conductance of 1.2 mS/mm were achieved
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor growth; vapour phase epitaxial growth; (100) substrate; 1 micron; 1.2 mS; 220 mS; AlGaAs/GaAs buffer layers; GaAs-AlGaAs-GaAs-InP structure; III-V semiconductors; InP substrates; MESFETs; X-ray rocking curve; epitaxial growth; integrated optoelectronics; linewidth; low-pressure MOCVD; micron gate length; optoelectronic ICs; output conductance; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8388
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