DocumentCode :
1326056
Title :
Microwave small-signal modelling of FinFETs using multi-parameter rational fitting method
Author :
Deschrijver, Dirk ; Avolio, Gustavo ; Schreurs, Dominique ; Dhaene, Tom ; Crupi, Giovanni ; Knockaert, Luc
Author_Institution :
Dept. of Inf. Technol. (INTEC), Ghent Univ., Ghent, Belgium
Volume :
47
Issue :
19
fYear :
2011
Firstpage :
1084
Lastpage :
1086
Abstract :
An effective approach based on a multi-parameter rational fitting technique is proposed to model the microwave small-signal response of active solid-state devices. The model is identified by fitting multi-bias scattering-parameter measurements and its analytical expression is implemented in a commercial microwave circuit simulator. The approach has been applied to the modelling of a silicon-based FinFET, and an excellent agreement is obtained between the measured data and model predictions.
Keywords :
MOSFET; S-parameters; elemental semiconductors; microwave field effect transistors; semiconductor device models; silicon; Si; active solid-state devices; microwave circuit simulator; microwave small-signal modelling; multibias scattering-parameter measurements; multiparameter rational fitting method; silicon-based FinFET;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.2394
Filename :
6025147
Link To Document :
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