DocumentCode
1326164
Title
Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions
Author
Lee, Gi-Doo ; Chun, Jung-Hoon ; Cao, Shuqing ; Beebe, Stephen G. ; Kwon, Kee-Won ; Dutton, Robert W.
Author_Institution
Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Volume
59
Issue
12
fYear
2012
Firstpage
3313
Lastpage
3320
Abstract
This work investigates the robustness of a stacked or cascoded driver under electrostatic discharge (ESD) events. Using output driver circuits in an actual I/O system with predrivers and rail-based power clamps, the impacts of all possible predriver connections and stacked-driver sizing are examined with the very fast transmission line pulse. It is verified that, when the input of the predriver connected to the top MOSFET is grounded, the failure current (IT2) is improved by ~ 110%, compared to the worst case where both predriver inputs are tied to VDD. Also, a simple trigger circuit which guarantees the electrical connection for better ESD immunity is proposed.
Keywords
MOSFET; clamps; driver circuits; electrostatic discharge; transmission lines; ESD conditions; ESD immunity; I/O system; MOSFET; cascoded driver; electrostatic discharge events; failure current; output driver circuits; rail-based power clamps; stacked device behaviour; stacked-driver sizing; transmission line pulse; trigger circuit; Breakdown voltage; Electrostatic discharges; Logic gates; Robustness; Transient analysis; Cascoded drivers; charged device model (CDM); electrostatic discharge (ESD); stacked devices; very fast transmission line pulse (VF-TLP);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2222888
Filename
6338282
Link To Document