• DocumentCode
    1326164
  • Title

    Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions

  • Author

    Lee, Gi-Doo ; Chun, Jung-Hoon ; Cao, Shuqing ; Beebe, Stephen G. ; Kwon, Kee-Won ; Dutton, Robert W.

  • Author_Institution
    Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
  • Volume
    59
  • Issue
    12
  • fYear
    2012
  • Firstpage
    3313
  • Lastpage
    3320
  • Abstract
    This work investigates the robustness of a stacked or cascoded driver under electrostatic discharge (ESD) events. Using output driver circuits in an actual I/O system with predrivers and rail-based power clamps, the impacts of all possible predriver connections and stacked-driver sizing are examined with the very fast transmission line pulse. It is verified that, when the input of the predriver connected to the top MOSFET is grounded, the failure current (IT2) is improved by ~ 110%, compared to the worst case where both predriver inputs are tied to VDD. Also, a simple trigger circuit which guarantees the electrical connection for better ESD immunity is proposed.
  • Keywords
    MOSFET; clamps; driver circuits; electrostatic discharge; transmission lines; ESD conditions; ESD immunity; I/O system; MOSFET; cascoded driver; electrostatic discharge events; failure current; output driver circuits; rail-based power clamps; stacked device behaviour; stacked-driver sizing; transmission line pulse; trigger circuit; Breakdown voltage; Electrostatic discharges; Logic gates; Robustness; Transient analysis; Cascoded drivers; charged device model (CDM); electrostatic discharge (ESD); stacked devices; very fast transmission line pulse (VF-TLP);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2222888
  • Filename
    6338282