DocumentCode
1326188
Title
High-Reliability RF-MEMS Switched Capacitors With Digital and Analog Tuning Characteristics
Author
Grichener, Alex ; Rebeiz, Gabriel M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Volume
58
Issue
10
fYear
2010
Firstpage
2692
Lastpage
2701
Abstract
This paper presents an RF microelectromechanical system switched-capacitor suitable for tunable filters and reconfigurable networks. The switched-capacitor results in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam (4-4.5 μm) results in Q greater than 100 at C-X-band frequencies, switching times of 30-50 μs, and power handling of 0.6-1.1 W. The design also minimizes charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high-power (1 W) conditions.
Keywords
capacitors; microswitches; RF microelectromechanical system switched-capacitor; analog capacitance ratio; analog tuning characteristics; digital capacitance ratio; digital tuning characteristics; down-state capacitance; high-reliability RF-MEMS switched capacitors; positive vertical stress gradient; power 0.6 W to 1.1 W; reconfigurable networks; thick electroplated beam; time 30 s to 50 s; tunable filters; Capacitance; Electrodes; Radio frequency; Springs; Stress; Structural beams; Switches; RF microelectromechanical systems (MEMS); Reconfigurable network; reliability; tunable capacitor; tunable filter;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2010.2065892
Filename
5575376
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