Title :
On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology
Author :
Loveless, T.D. ; Kauppila, J.S. ; Jagannathan, S. ; Ball, D.R. ; Rowe, J.D. ; Gaspard, N.J. ; Atkinson, N.M. ; Blaine, R.W. ; Reece, T.R. ; Ahlbin, J.R. ; Haeffner, T.D. ; Alles, M.L. ; Holman, W.T. ; Bhuva, B.L. ; Massengill, L.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Direct observation of fast-transient single event signatures often involves considerable uncertainty due to the limitations of monitoring circuitry. A built-in-self-test circuit for the measurement of single-event transients (SET) has been implemented in a 45 nm partially depleted silicon-on-insulator technology that allows for the extraction of measurement-induced uncertainty. SET pulse width data from heavy-ion experiments are provided and compared to technology computer aided design simulations. A method for compensating for the measurement bias and skew is provided.
Keywords :
ion beam effects; silicon-on-insulator; technology CAD (electronics); SET pulse width data; built-in-self-test circuit; computer aided design simulations; fast-transient single event signatures; heavy-ion experiments; measurement-induced uncertainty extraction; monitoring circuitry limitations; silicon-on-insulator technology; single-event transients on-chip measurement; size 45 nm; Radiation effects; Silicon on insulator technology; Single event transient; System-on-a-chip; Transient analysis; Built-in testing; CMOS; heavy ion testing; radiation effects; silicon-on-insulator (SOI); single-event transients;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2218257
