DocumentCode :
1326385
Title :
Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method
Author :
Weng, Peng-Hsiang ; Wu, Tzeng-Tsong ; Lu, Tien-Chang
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
18
Issue :
6
fYear :
2012
Firstpage :
1629
Lastpage :
1635
Abstract :
In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Γ1 , K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; laser modes; light scattering; optical fabrication; photonic crystals; quantum well lasers; surface emitting lasers; wide band gap semiconductors; Γ1 band edge; GaN; K2 band edge; M3 band edge; PCSEL; band-edge modes; mode patterns; multiple-scattering method; photonic crystal surface-emitting lasers; real space; reciprocal space; threshold gain; Laser modes; Lattices; Magnetic fields; Materials; Photonic crystals; Resonant frequency; Surface emitting lasers; Distributed feedback (DFB); GaN; multiple scattering; photonic crystal; surface-emitting lasers (SELs);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2011.2169237
Filename :
6025244
Link To Document :
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