Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

Author

Weng, Peng-Hsiang ; Wu, Tzeng-Tsong ; Lu, Tien-Chang

Author_Institution

Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

18

Issue

6

fYear

2012

Firstpage

1629

Lastpage

1635

Abstract

In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Γ1 , K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.

Keywords

III-V semiconductors; gallium compounds; laser cavity resonators; laser modes; light scattering; optical fabrication; photonic crystals; quantum well lasers; surface emitting lasers; wide band gap semiconductors; Γ1 band edge; GaN; K2 band edge; M3 band edge; PCSEL; band-edge modes; mode patterns; multiple-scattering method; photonic crystal surface-emitting lasers; real space; reciprocal space; threshold gain; Laser modes; Lattices; Magnetic fields; Materials; Photonic crystals; Resonant frequency; Surface emitting lasers; Distributed feedback (DFB); GaN; multiple scattering; photonic crystal; surface-emitting lasers (SELs);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2011.2169237

Filename

6025244