Reliability of Hybrid Silicon Distributed Feedback Lasers

Author

SRINIVASAN, SUDARSHAN ; Julian, Nick ; Peters, Jochen ; Di Liang ; Bowers, John E.

Author_Institution

Univ. of California at Santa Barbara, Santa Barbara, CA, USA

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1501305

Lastpage

1501305

Abstract

We present results from reliability studies on hybrid silicon distributed feedback lasers. The devices show no degradation at 70 °C for 5000 h. We investigate the influence on reliability of a superlattice between the active region and the bonded interface. Transmission electron microscopy images from a failed device show no defects in the active region along a 15-μm-long longitudinal cross section at the center of the laser cavity.

Keywords

distributed feedback lasers; elemental semiconductors; laser cavity resonators; laser reliability; silicon; transmission electron microscopy; active region; bonded interface; hybrid silicon distributed feedback lasers; laser cavity; longitudinal cross section; reliability; size 15 mum; temperature 70 degC; time 5000 h; transmission electron microscopy; Aging; Degradation; Diode lasers; Indium phosphide; Reliability; Silicon; Superlattices; Dark current and transmission electron microscopy; distributed feedback devices; semiconductor device reliability;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2240438

Filename

6413166