Title :
Activation energy of DC-drift of x-cut LiNbO3 optical intensity modulators
Author :
Nagata, Hirotoshi
Author_Institution :
Optoelectron. Res. Div., Sumitomo Osaka Cement Co. Ltd., Chiba, Japan
fDate :
4/1/2000 12:00:00 AM
Abstract :
The DC-bias-induced drift phenomenon in LiNbO/sub 3/ optical intensity modulators is a main cause of device wearout failure. In order to estimate the device lifetime, an activation energy value Ea of the drift is needed, and Ea=1.0 eV is already known for z-cut LiNbO/sub 3/ modulators. However, Ea of x-cut LiNbO/sub 3/ modulators is not known even though there is a possibility that the Ea depends on the crystal orientation. Here, Ea=1.4 eV is obtained experimentally for the x-cut LiNbO/sub 3/ modulator with a SiO/sub 2/ buffer layer from their drift measurements between 50/spl deg/C-140/spl deg/C.
Keywords :
crystal orientation; lithium compounds; optical fabrication; optical materials; optical modulation; optical testing; optical waveguide components; 50 to 140 C; DC-bias-induced drift phenomenon; DC-drift; LiNbO/sub 3/; LiNbO/sub 3/ optical intensity modulators; LiNbO/sub 3/:Ti; SiO/sub 2/; SiO/sub 2/ buffer layer; activation energy; activation energy value; crystal orientation; device lifetime; device wearout failure; drift measurements; optical intensity modulators; z-cut LiNbO/sub 3/ modulators; High speed optical techniques; Intensity modulation; Life estimation; Lifetime estimation; Optical buffering; Optical devices; Optical feedback; Optical modulation; Optical waveguides; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
