DocumentCode :
1326484
Title :
Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit
Author :
Hattasan, Nannicha ; Gassenq, Alban ; Cerutti, Laurent ; Rodriguez, Jean-Baptiste ; Tournié, Eric ; Roelkens, Gunther
Author_Institution :
INTEC-Dept., Ghent Univ. - IMEC, Ghent, Belgium
Volume :
23
Issue :
23
fYear :
2011
Firstpage :
1760
Lastpage :
1762
Abstract :
We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 109 cmHz1/2/W of Johnson-noise-limited-detectivity.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; optical waveguides; p-i-n photodiodes; silicon-on-insulator; GaInAsSb; Johnson-noise-limited-detectivity; current 1.13 muA; dark current; heterogeneous integration; p-i-n photodiodes; silicon-on-insulator waveguide circuit; voltage -0.1 V; Bonding; Dark current; Optical waveguides; Photodiodes; Silicon on insulator technology; Temperature measurement; GaInAsSb; heterogeneous integration; photodiode;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2169244
Filename :
6025258
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1326484
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