Title :
Waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode
Author :
Kinsey, Geoffrey S. ; Hansing, C.C. ; Holmes, A.L., Jr. ; Streetman, B.G. ; Campbell, J.C. ; Dentai, A.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
A high-speed waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 μm has been demonstrated, a unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical waveguides; photodetectors; 1.55 mum; 27 GHz; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As separate absorption charge multiplication avalanche photodiode; gain-bandwidth product; unity-gain bandwidth; waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Indium phosphide; Mirrors; Optical fibers; Optical waveguides; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
