A charge-sheet capacitance model based on drain current modeling

Author

Budde, Wolfram ; Lamfried, Wolfgang H.

Author_Institution

Dept. of Electron Devices & Circuits, Duisburg Univ., West Germany

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1678

Lastpage

1687

Abstract

Analytical models of the drain current and the capacitances of a MOSFET are formulated using the charge-sheet approach. Mobility reduction due to velocity saturation and interface scattering of carriers are taken into account. A saturation criterion is developed from the condition of output conductance continuity. The capacitance modeling does not require additional parameters not contained in the DC model. Comparison with experimental data confirms that the theory is useful for analog circuit simulation down to channel lengths of about 1 μm

Keywords

capacitance; carrier mobility; insulated gate field effect transistors; semiconductor device models; 1 micron; MOSFET; analog circuit simulation; carriers; channel lengths; charge-sheet capacitance model; drain current modeling; interface scattering; output conductance continuity; saturation criterion; velocity saturation; Analog circuits; Analytical models; Capacitance; Circuit simulation; Dielectric substrates; MOSFET circuits; Permittivity; Semiconductor device doping; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55755

Filename

55755