• DocumentCode
    132681
  • Title

    A deep trench capacitor based 2:1 and 3:2 reconfigurable on-chip switched capacitor DC-DC converter in 32 nm SOI CMOS

  • Author

    Andersen, Toke Meyer ; Krismer, F. ; Kolar, Johann Walter ; Toifl, Thomas ; Menolfi, Christian ; Kull, Lukas ; Morf, Thomas ; Kossel, Marcel ; Brandli, Matthias ; Buchmann, Peter ; Francese, Pier Andrea

  • Author_Institution
    Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2014
  • fDate
    16-20 March 2014
  • Firstpage
    1448
  • Lastpage
    1455
  • Abstract
    On-chip switched capacitor (SC) converters for multicore microprocessor power delivery have the potential to reduce the overall energy consumption of future multicore microprocessor systems by independently regulating the voltage supply of each core. This paper describes an on-chip SC converter that can be reconfigured between a 2:1 and a 3:2 voltage conversion ratio to support a wide output voltage range from a single input supply. Regarding SC converter analysis and modeling, this paper extends an existing state space model framework to include the flying capacitors´ parasitic bottom plate capacitors, which for on-chip SC converters significantly influence both the capacitor currents and the converter efficiency. A reconfigurable SC converter that supports an output voltage range of 700mV to 1150mV from a 1.8V input supply is implemented in a 32nm SOI CMOS technology that features the high-density deep trench capacitor. The converter achieves a maximum efficiency of 85.2% at 2.1W/mm2 power density in the 2:1 configuration and a maximum efficiency of 84.1% at 3.2W/mm2 in the 3:2 configuration.
  • Keywords
    CMOS integrated circuits; DC-DC power convertors; capacitor switching; charge pump circuits; microprocessor chips; multiprocessing systems; silicon-on-insulator; DC-DC converter; SOI CMOS technology; energy consumption; flying capacitors; high-density deep trench capacitor; multicore microprocessor power delivery; on-chip SC converter; on-chip switched capacitor; parasitic bottom plate capacitors; size 32 nm; voltage 1.8 V; voltage 700 mV to 1150 mV; voltage conversion ratio; voltage supply; Capacitors; Mathematical model; Microprocessors; Semiconductor device modeling; Switches; Switching loss; System-on-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • Type

    conf

  • DOI
    10.1109/APEC.2014.6803497
  • Filename
    6803497