Low-temperature (77 K) BJT model with temperature dependences on the injected condition and base resistance

Author

Satake, Hideki ; Hamasaki, Toshihiko

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1688

Lastpage

1697

Abstract

A low-temperature (77-K) bipolar transistor model based on physical analysis by considering the temperature dependences of the injection condition and base resistance modulation is described. A charge-based injection factor which describes the temperature dependence of the ideality factor n is introduced by taking into account the electron and hole concentration ratios at the edges of the emitter-base depletion layer. The temperature dependence of base resistance modulation is explained by using the temperature dependences of the conductivity modulation effect, the base pushout effect, and the emitter current-crowding effect. Calculations using the model are compared with measurements, revealing excellent agreement over a wide temperature range from 50 to 298 K

Keywords

bipolar transistors; semiconductor device models; 50 to 298 K; 77 K; BJT model; base pushout effect; base resistance; base resistance modulation; bipolar transistor model; charge-based injection factor; conductivity modulation effect; electron concentration ratio; emitter current-crowding effect; emitter-base depletion layer; hole concentration ratios; ideality factor; injected condition; temperature dependences; Bipolar transistors; CMOS technology; Charge carrier processes; Conductivity; Delay; Electrical resistance measurement; Electron emission; Ring oscillators; Semiconductor device modeling; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55756

Filename

55756