Active compensation of current unbalance in paralleled silicon carbide MOSFETs

Current unbalance in paralleled power electronic devices can affect the performance and reliability of them. In this paper, the factors causing current unbalance in parallel connected silicon carbide (SiC) MOSFETs are analyzed, and the threshold mismatch is identified as the major factor. Then the distribution and temperature dependence of SiC MOSFETs´ threshold voltage are studied experimentally. Based on the analysis and study, an active current balancing (ACB) scheme is presented. The scheme directly measures the unbalance current, and eliminates it in closed loop by varying the gate delay to each device. The turn-on and turn-off current unbalance are sensed and independently compensated to yield an optimal performance at both switching transitions. The proposed scheme provides robust compensation of current unbalance in fast-switching wide-band-gap devices while keeping circuit complexity and cost low. The performance of the proposed ACB scheme is verified by both simulation and experimental results.