Title :
Gate drive design considerations for high voltage cascode GaN HEMT
Author :
Wei Zhang ; Xiucheng Huang ; Lee, Fred C. ; Qiang Li
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Center for Power Electron. Syst. - CPES, Blacksburg, VA, USA
Abstract :
This paper investigates gate drive design for high voltage gallium nitride (GaN) high electron-mobility transistors (HEMT) in a cascade structure. High dv/dt and di/dt switching characteristics of GaN device and its influences on high-side gate drive are analyzed on an 8.4kW bidirectional multi-channel buck/boost battery charger operating in critical conduction mode (CRM). Driving candidates for high-side gate drive are reviewed, and digital isolator based driving architecture is proposed with discussion of PCB layout and package parasitics. Experimental results are conducted in each step for concepts validation.
Keywords :
battery chargers; gallium compounds; high electron mobility transistors; CRM; HEMT; PCB layout; bidirectional multichannel buck/boost battery charger; cascade structure; critical conduction mode; digital isolator; driving architecture; gate drive design considerations; high electron-mobility transistors; high voltage gallium nitride; package parasitics; Drives; Gallium nitride; Isolators; Layout; Logic gates; Silicon; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803503
