Laser diodes integrated with butt-jointed spotsize converter fabricated on 2-in wafer

Author

Wada, Masato ; Okamoto, Minoru ; Kishi, Kenji ; Kadota, Yoshiaki ; Qkamoto, M. ; Kondo, Yasuhiro ; Sakai, Yoshihisa ; Oohashi, Hiromi ; Suzaki, Yasumasa ; Tohmori, Yuichi ; Nakao, Masashi ; Itaya, Yoshio ; Yamamoto, Mitsuo

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

15

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

498

Lastpage

504

Abstract

Laser diodes integrated with spotsize converters by butt-joint technology combined with selective area metal organic vapor phase epitaxial (MOVPE) growth have been successfully fabricated. Satisfactory uniformity, reproducibility (>99%) and tolerance for low threshold current, a narrow emitted beam, and low optical coupling loss to fiber (<-2.4 dB) are obtained by using 2-in full wafer fabrication technology in the experimental fabrication. To investigate the tolerance in fabrication, the characteristic dependence on the variation of the wet etching time just before the butt-joint MOVPE growth and also on the mesa stripe width are investigated. A wide tolerance for these fabrication parameters is confirmed. The results indicate that the butt-joint technology is a useful and reliable process for realizing spotsize converters of the present type and also suggest that the technology is widely applicable to various photonic integrated circuits

Keywords

etching; integrated optics; optical fibre couplers; optical transmitters; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; wafer bonding; 2 in; 2-in wafer; 2.4 dB; MOVPE; butt-jointed spotsize converter; fiber; laser diodes; low optical coupling loss; low threshold current; mesa stripe width; narrow emitted beam; photonic integrated circuits; reproducibility; selective area metal organic vapor phase epitaxial growth; spotsize converters; tolerance; uniformity; wafer fabrication technology; wet etching time; Diode lasers; Epitaxial growth; Epitaxial layers; Integrated circuit technology; Laser beams; Molecular beam epitaxial growth; Optical beams; Optical device fabrication; Reproducibility of results; Threshold current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.557566

Filename

557566