Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE

Author

Mawatari, Hiroyasu ; Fukuda, Mitsuo ; Matsumoto, Shin-ichi ; Kishi, Kenji ; Itaya, Yoshio

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

15

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

534

Lastpage

537

Abstract

We clarified the degradation behaviors of semi-insulating buried heterostructure lasers in which mesa structures were fabricated by reactive ion etching (RIE) and then buried in semi-insulating Fe-doped InP grown by metal organic vapor phase epitaxy (MOVPE). The degradation rate and mode correlated with the quality of the buried heterostructure (BH) interface. Based on the correlation, a condition for highly stable semi-insulating Fe-doped InP buried heterostructure (SIBH) lasers was demonstrated and confirmed experimentally and statistically

Keywords

III-V semiconductors; indium compounds; iron; optical fabrication; quantum well lasers; semiconductor device reliability; semiconductor growth; sputter etching; vapour phase epitaxial growth; GaInAsP; InP:Fe; MOVPE; MQW structure; RIE; correlation; degradation behavior; degradation rate; fabrication; interface quality; mesa structures; mode; reactive ion etching; reliability; semi-insulating Fe-doped InP buried heterostructure lasers; Doping; Epitaxial growth; Epitaxial layers; Etching; Fiber lasers; Indium phosphide; Iron; Laser modes; Laser stability; Thermal degradation;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.557570

Filename

557570