Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures

Author

Geum, Dae-Myeong ; Shin, Seung Heon ; Park, Min-Su ; Jang, Jae-Hyung

Author_Institution

Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

50

Issue

21

fYear

2014

fDate

October 9 2014

Firstpage

1545

Lastpage

1547

Abstract

The effects of nitrogen (N₂) flow rate during high-temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N₂ flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10^-7 Ω·cm².

Keywords

III-V semiconductors; aluminium; aluminium compounds; annealing; contact resistance; gallium compounds; gold; high-temperature techniques; indium compounds; metallisation; nickel; nitrogen; ohmic contacts; semiconductor heterojunctions; semiconductor-metal boundaries; titanium; wide band gap semiconductors; InAlN-GaN; N₂; SCCM N₂ flow rate; Ti-Al-Ni-Au; contact resistance; heterostructures; high-temperature annealing; nitrogen flow rate effects; ohmic contact performance; ohmic metallisation; specific contact resistivity; temperature 900 degC; transfer length;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.2061

Filename

6926982