DocumentCode
132700
Title
Recent developments in GaAs power switching devices including device modeling
Author
White, Robert V. ; Miller, Greg J. ; Duduman, Bogdan M. ; Erickson, Robert
Author_Institution
Univ. of Colorado - Boulder, Boulder, CO, USA
fYear
2014
fDate
16-20 March 2014
Firstpage
1502
Lastpage
1509
Abstract
A new GaAs power switching device, the gFET™ switch was introduced at APEC 2013. This paper describes devices developed since APEC 2013 including depletion mode devices with nominal on resistances of 7, 14 and 40 MΩ as well as an enhancement mode device with a nominal on resistance of 40 MΩ. The enhancement mode device is particularly well suited for use as a control switch in buck converters. The paper also describes the development of SPICE models from the experimental data.
Keywords
III-V semiconductors; SPICE; elemental semiconductors; power semiconductor switches; switching convertors; SPICE models; buck converters; control switch; depletion mode devices; enhancement mode device; gFET switch; gallium arsenide power switching devices; power electronics; Capacitance; Gallium arsenide; HEMTs; Logic gates; MODFETs; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location
Fort Worth, TX
Type
conf
DOI
10.1109/APEC.2014.6803506
Filename
6803506
Link To Document