Title :
Polyimide-related design considerations in a bipolar technology
Author :
Hook, Terence B.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
It is found that a spurious leakage path from the emitter to the collector of a lateral p-n-p or a trench-defined n-p-n device may be induced by the applied collector voltage. This voltage influences the surface potential at the emitter-base junction through the charging of the polyimide used as interlevel dielectric or as trench fill, respectively. A simple model of the effect is developed, and several successful process features are discussed
Keywords :
bipolar transistors; polymers; semiconductor device models; applied collector voltage; bipolar technology; emitter-base junction; interlevel dielectric; lateral p-n-p; model; polyimide; spurious leakage path; surface potential; trench fill; trench-defined n-p-n device; Dielectrics and electrical insulation; Epitaxial layers; Etching; FETs; Metallization; Planarization; Polyimides; Silicon; Surface charging; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
