Title :
Design of metallizations and components for aluminum nitride packages for VLSIC
Author :
Luh, Ellice Y. ; Enloe, Jack H. ; Dolhert, Leonard E. ; Lau, John W. ; Kovacs, Alan L. ; Ehlert, Michael R.
Author_Institution :
W.R. Grace & Co., Columbia, MD, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
A program to produce large cofired aluminum nitride (AIN) packages for support of silicon-based high-density multichip modules (MCMs) is discussed. Perimeter leaded packages measuring over 4 in in length and having over 600 leads on 0.025-in centers have been developed. The size and fine lead pitch require tight dimensional control, including 0.1% on both the flatness and the placement of cofired lead pads. These dimensional requirements, as well as the hermeticity and thermal-mechanical reliability requirements for military use, have been met through a combination of engineering/design solutions and the implementations of new material systems and processes
Keywords :
VLSI; aluminium compounds; ceramics; dielectric materials; hybrid integrated circuits; packaging; substrates; thermal expansion; 0.025 in; 4 in; AlN packaging; MCMs; Si chips; dimensional control; fine lead pitch; flatness; hermeticity; high-density multichip modules; material systems; military packages; multichip modules; placement of cofired lead pads; thermal-mechanical reliability requirements; Aluminum nitride; Design engineering; Length measurement; Materials reliability; Metallization; Multichip modules; Packaging; Reliability engineering; Size control; Thermal engineering;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
