Design of metallizations and components for aluminum nitride packages for VLSIC

Author

Luh, Ellice Y. ; Enloe, Jack H. ; Dolhert, Leonard E. ; Lau, John W. ; Kovacs, Alan L. ; Ehlert, Michael R.

Author_Institution

W.R. Grace & Co., Columbia, MD, USA

Volume

14

Issue

3

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

538

Lastpage

542

Abstract

A program to produce large cofired aluminum nitride (AIN) packages for support of silicon-based high-density multichip modules (MCMs) is discussed. Perimeter leaded packages measuring over 4 in in length and having over 600 leads on 0.025-in centers have been developed. The size and fine lead pitch require tight dimensional control, including 0.1% on both the flatness and the placement of cofired lead pads. These dimensional requirements, as well as the hermeticity and thermal-mechanical reliability requirements for military use, have been met through a combination of engineering/design solutions and the implementations of new material systems and processes

Keywords

VLSI; aluminium compounds; ceramics; dielectric materials; hybrid integrated circuits; packaging; substrates; thermal expansion; 0.025 in; 4 in; AlN packaging; MCMs; Si chips; dimensional control; fine lead pitch; flatness; hermeticity; high-density multichip modules; material systems; military packages; multichip modules; placement of cofired lead pads; thermal-mechanical reliability requirements; Aluminum nitride; Design engineering; Length measurement; Materials reliability; Metallization; Multichip modules; Packaging; Reliability engineering; Size control; Thermal engineering;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.83941

Filename

83941