Development of temperature-stable thick-film dielectrics. III. Role of glass on the microstructure evolution of a thick-film dielectric

Author

Chiou, Bi-Shiou ; Liu, K.C. ; Duh, Jenq-Gong ; Chung, M.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

14

Issue

3

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

645

Lastpage

649

Abstract

For pt.I see ibid., vol.12, p.798-808 (1989). Glass phase plays an important role in the characteristics of thick-film microelectronics. A dielectric system in BaTiO₃ and SrTiO₃ containing PbO, B₂O₃, SiO₂, and Al₂O ₃ glass constituents is investigated. Microstructure evolution and phase distribution after thermal aging are studied with the aid of electron microscope and X-ray diffractometer. It is observed that the phases in 40 vol.% BaTiO₃-25 vol.% SrTiO₃-35 vol.% glass thick-film dielectric are not altered after 500°C aging for 480 h. The variation in surface morphology after aging is attributed to the precipitation of heavy metal component from the glass which acts as a diffusion species and then dissolves the crystalline phase during firing. The presence of glass in the dielectric enhances the formation of solid solution (Ba_xSr_1-x)TiO₃ and results in the broadening of the Curie peak

Keywords

ageing; barium compounds; dielectric materials; environmental testing; glass; materials testing; strontium compounds; thick film circuits; BaTiO₃-SrTiO₃-PbO-B₂O₃-SiO₂-Al₂O₃; Curie peak broadening; X-ray diffractometer; characteristics; microstructure evolution; phase distribution; precipitation of heavy metal component; role of glass; solid solution formation; surface morphology; temperature-stable thick-film dielectrics; thermal aging; thick-film microelectronics; Aging; Crystallization; Dielectrics; Electron microscopy; Glass; Microelectronics; Microstructure; Solids; Surface morphology; X-ray diffraction;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.83957

Filename

83957