DocumentCode
1327489
Title
A BiCMOS programmable continuous-time filter using image-parameter method synthesis and voltage-companding technique
Author
Van Ruymbeke, Gilles ; Enz, Christian C. ; Krummenacher, François ; Declercq, Michel
Author_Institution
Logitech Inc., Fremont, CA, USA
Volume
32
Issue
3
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
377
Lastpage
387
Abstract
This paper presents a BiCMOS realization of a structure-programmable continuous-time filter built with sections synthesized by the image-parameter method and demonstrating the feasibility of the voltage companding technique. The circuit implements any one of four lowpass filters of order 2-5 or one fourth-order bandpass filter by interconnecting a set of identical cells. The filter is obtained by a component level substitution transforming a gm -C structure into its log-domain equivalent. The gm-C structures are derived from LC ladder prototypes which are synthesized using the image-parameter method. This technique can be extended to realize higher order filters using multichip configurations. As an example, six lowpass filters (order 6-11) and three bandpass filters (order 6, 8, and 10) have been measured using three chips. The programmable filters can additionally be frequency tuned from 10-100 kHz with a low total harmonic distortion (THD) despite their class AB operation
Keywords
BiCMOS analogue integrated circuits; band-pass filters; continuous time filters; integrated circuit design; ladder filters; low-pass filters; network parameters; nonlinear filters; programmable filters; 10 to 100 kHz; BiCMOS programmable continuous-time filter; LC ladder; bandpass filter; class AB operation; component level substitution; frequency tuning; gm-C structure; high order filter; image parameter method; log-domain structure; lowpass filter; multichip; synthesis; total harmonic distortion; voltage companding; Band pass filters; BiCMOS integrated circuits; Circuit synthesis; Distortion measurement; Frequency; Integrated circuit interconnections; Prototypes; Semiconductor device measurement; Total harmonic distortion; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.557636
Filename
557636
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