Title :
Low-cost process for fabricating polysilicon transistors
Author :
Ipri, Alfred C. ; Kaganowicz, Grzegorz
Author_Institution :
SRI Int., Princeton, NJ, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A process for the fabrication of p-channel polysilicon MOS transistors is described. The process is compatible with the use of low-temperature glass substrates and replaces the use of ion implantation for the source/drain doping with in situ doped polysilicon. MOS transistors made with this process exhibit an on/off current ratio of 2.5×105, a mobility of 16 cm2/V-s, and a subthreshold slope of 1.3 V/decade
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor doping; silicon; MOS transistors; low-temperature glass substrates; mobility; on/off current ratio; polysilicon transistors; source/drain doping; subthreshold slope; Aluminum; Amorphous silicon; Costs; Doping; Electrons; Fabrication; Glass; Ion implantation; MOSFETs; Semiconductor films;
Journal_Title :
Electron Devices, IEEE Transactions on
