• DocumentCode
    1327689
  • Title

    An improved junction field-effect transistor static model for integrated circuit simulation

  • Author

    Wong, W.W. ; Liou, J.J. ; Prentice, J.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    37
  • Issue
    7
  • fYear
    1990
  • fDate
    7/1/1990 12:00:00 AM
  • Firstpage
    1773
  • Lastpage
    1775
  • Abstract
    A physics-based junction field-effect transistor (JFET) static model for integrated circuit simulation is developed. The model covers the behavior of the linear and saturation current regions without requiring fitting parameters. Subthreshold characteristics in the saturation region are also included in the model. Excellent agreement is obtained when the model is compared with experimental data
  • Keywords
    junction gate field effect transistors; semiconductor device models; integrated circuit simulation; junction field-effect transistor static model; linear region; saturation current regions; subthreshold characteristics; Digital circuits; FETs; Fabrication; Integrated circuit measurements; Integrated circuit modeling; JFET integrated circuits; Power electronics; Predictive models; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.55768
  • Filename
    55768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1327689