• DocumentCode
    1327809
  • Title

    A CMOS uncooled heat-balancing infrared imager

  • Author

    Liu, Chien-Chang ; Mastrangelo, Carlos H.

  • Author_Institution
    Center for Integrated Microsyst., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    35
  • Issue
    4
  • fYear
    2000
  • fDate
    4/1/2000 12:00:00 AM
  • Firstpage
    527
  • Lastpage
    535
  • Abstract
    In this paper, we report the fabrication, design, and testing of an uncooled 8/spl times/8 infrared imager based on an active pixel heat balancing technique. The imager is fabricated using a commercial CMOS process plus a simple electrochemical etch stop releasing step. The basic active pixel detector structure consists of a simple cascode CMOS amplifier in which the PMOS devices are built inside a thermally isolated floating n-well. The intrinsic coupling of the cascode currents with the self-heating of the well forms an electrothermal feedback loop that tends to maintain the well temperature constant, By employing the heat balance between incoming infrared radiation and the PMOS device power dissipation, the responsivity of the detector is controlled by the cascode biasing current. Measurements show responsivities between 0.3-1.2/spl times/10/sup 6/ V/W when the infrared source is chopped at 20 Hz and a detectivity D*=3/spl times/10/sup 7/ cm/spl radic/(Hz)W/sup -1/ at 30 Hz. Noise measurements suggest that a D* of 10/sup 8/ cm/spl radic/(Hz)W/sup -1/ is achievable in this design.
  • Keywords
    CMOS image sensors; closed loop systems; infrared detectors; infrared imaging; integrated circuit noise; 20 Hz; 30 Hz; CMOS; PMOS device power dissipation; active pixel detector structure; active pixel heat balancing technique; biasing current; cascode CMOS amplifier; cascode currents; detectivity; electrochemical etch stop releasing; electrothermal feedback loop; responsivity; thermally isolated floating n-well; uncooled heat-balancing infrared imager; CMOS process; Etching; Fabrication; Infrared detectors; Infrared heating; Infrared imaging; MOS devices; Noise measurement; Pixel; Testing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.839912
  • Filename
    839912