DocumentCode
1327830
Title
Advanced controlling scheme for a DRAM voltage generator system
Author
Weinfurtner, Oliver ; Storaska, Daniel ; Hsu, Louis
Author_Institution
Infineon Technol., Hopewell Junction, NY, USA
Volume
35
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
552
Lastpage
563
Abstract
An brief overview is given of the voltage generator system of a 1-Gb synchronous DRAM. The design serves as an example for a state-of-the-art DRAM voltage generator system. A general analysis of the required controlling functionality is derived. A universal and flexible controlling scheme for a voltage generator system is presented, which can easily be modified for future voltage generator design. The main aspect of this controlling scheme is a clear separation between logic (digital) controlling functions and (analog) voltage generating functions. A control path that supplies the various voltage generator blocks with configuration information is introduced. Last, the control path is shown to have an additional advantage of increased testability. Hardware results verifying the concept are presented.
Keywords
DRAM chips; design for testability; finite state machines; integrated circuit design; 1 Gbit; DRAM; analog voltage generating functions; controlling functionality; digital controlling functions; testability; voltage generator system; Circuits; Control systems; Hardware; Logic; Parasitic capacitance; Power generation; Random access memory; Synchronous generators; System testing; Voltage control;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.839915
Filename
839915
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