• DocumentCode
    1327843
  • Title

    Self-consistent solutions for allowed interconnect current density. I. Implications for technology evolution

  • Author

    Hunter, William R.

  • Author_Institution
    Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    44
  • Issue
    2
  • fYear
    1997
  • fDate
    2/1/1997 12:00:00 AM
  • Firstpage
    304
  • Lastpage
    309
  • Abstract
    We comprehend both interconnect electromigration and Joule heating to study for the first time the self-consistent solutions for the maximum allowed interconnect peak current density jpeak as a function of wave shape. The maximum allowed temperature and jpeak solutions monotonically increase as the duty cycle r decreases. Self-consistent solutions indicate that there are diminishing returns in the usefulness of increasing the electromigration capability of the interconnect system. While the greatest increase in allowed jpeak occurs at de stress (r=1), the increases becomes less as r is reduced below 1, and becomes negligible for r<0.01. Further increases in jpeak will have to come at some future time from technology options which lower the temperatures at which the interconnects operates
  • Keywords
    MOSFET; current density; electromigration; semiconductor device metallisation; semiconductor device models; Joule heating; MOSFETs; duty cycle; interconnect current density; interconnect electromigration; maximum allowed temperature; operating temperatures; self-consistent solutions; technology evolution; wave shape; Current density; Electromigration; Heating; Integrated circuit interconnections; Lead; Semiconductor process modeling; Shape; Silicon; Stress; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.557721
  • Filename
    557721