DocumentCode :
1327843
Title :
Self-consistent solutions for allowed interconnect current density. I. Implications for technology evolution
Author :
Hunter, William R.
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Volume :
44
Issue :
2
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
304
Lastpage :
309
Abstract :
We comprehend both interconnect electromigration and Joule heating to study for the first time the self-consistent solutions for the maximum allowed interconnect peak current density jpeak as a function of wave shape. The maximum allowed temperature and jpeak solutions monotonically increase as the duty cycle r decreases. Self-consistent solutions indicate that there are diminishing returns in the usefulness of increasing the electromigration capability of the interconnect system. While the greatest increase in allowed jpeak occurs at de stress (r=1), the increases becomes less as r is reduced below 1, and becomes negligible for r<0.01. Further increases in jpeak will have to come at some future time from technology options which lower the temperatures at which the interconnects operates
Keywords :
MOSFET; current density; electromigration; semiconductor device metallisation; semiconductor device models; Joule heating; MOSFETs; duty cycle; interconnect current density; interconnect electromigration; maximum allowed temperature; operating temperatures; self-consistent solutions; technology evolution; wave shape; Current density; Electromigration; Heating; Integrated circuit interconnections; Lead; Semiconductor process modeling; Shape; Silicon; Stress; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.557721
Filename :
557721
Link To Document :
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