Title :
A 10-Gb/s high-isolation, 16/spl times/16 crosspoint switch implemented with AlGaAs/GaAs HBT´s
Author :
Metzger, Andre G. ; Chang, Charles E. ; Pedrotti, Ken D. ; Beccue, Steve M. ; Wang, Keh-Chung ; Asbeck, Peter M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
A high-isolation, 16/spl times/16 crosspoint switch is reported, capable of aggregate data throughput of 160 Gb/s with low crosstalk and output jitter. Each of the 16 fully asynchronous channels can transmit data at rates up to 10 Gb/s with a worst case r.m.s. output jitter of 4 ps. Single channel operation output jitter below 2.8 ps r.m.s. has been demonstrated. The high-isolation circuitry allows for inter-channel crosstalk isolation of more than 40 dB with all channels operative. The circuit is based on AlGaAs/GaAs heterojunction bipolar transistor technology.
Keywords :
III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; bipolar transistor switches; crosstalk; data communication equipment; digital communication; electronic switching systems; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; jitter; 10 Gbit/s; 160 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT chip; asynchronous channels; heterojunction bipolar transistor technology; high-isolation crosspoint switch; inter-channel crosstalk isolation; low crosstalk; low output jitter; Communication switching; Crosstalk; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Jitter; Packet switching; Switches; Switching circuits; Telecommunication traffic;
Journal_Title :
Solid-State Circuits, IEEE Journal of
