DocumentCode :
1327864
Title :
A VT generator
Author :
Viswanathan, T.R. ; Nagaraj, Kanthi
Author_Institution :
Dept. of Electr. Eng., Waterloo Univ., Ont., Canada
Volume :
11
Issue :
2
fYear :
1986
fDate :
4/1/1986 12:00:00 AM
Firstpage :
87
Lastpage :
88
Abstract :
In MOS circuits, there is a need to generate a voltage equal to the threshold voltage VT of the MOSFETs and a current equal to KVT2 (where K is the conduction parameter of a MOSFET) for the purposes of supply-independent biasing and temperature compensation. A circuit which generates these quantities is presented.
Keywords :
field effect integrated circuits; reference circuits; MOS circuits; MOSFETs; supply-independent biasing; temperature compensation; threshold voltage; voltage generation; Generators; Geometry; Logic gates; MOSFET; Threshold voltage;
fLanguage :
English
Journal_Title :
Electrical Engineering Journal, Canadian
Publisher :
ieee
ISSN :
0700-9216
Type :
jour
DOI :
10.1109/CEEJ.1986.6593750
Filename :
6593750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1327864
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