• DocumentCode
    1327875
  • Title

    Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth

  • Author

    Lourdudoss, S. ; Ovtchinnikov, A. ; Kjebon, O. ; Nilsson, S. ; Bäckbom, L. ; Klinga, T. ; Holz, R.

  • Author_Institution
    Dept. of Electron., R. Inst. of Technol., Kista, Sweden
  • Volume
    44
  • Issue
    2
  • fYear
    1997
  • fDate
    2/1/1997 12:00:00 AM
  • Firstpage
    339
  • Lastpage
    340
  • Abstract
    Selective regrowth of semi-insulating Ga0.51In0.49 P: Fe (resistivity ≈1×1012 Ω cm) has been realized for the first time to fabricate entirely Al free buried heterostructure GaInP/GaInAsP/GaAs laser emitting at 905 mn. The fabrication procedure and the laser characteristics are presented,
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; iron; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; sputter etching; 905 nm; GaInP:Fe-GaInAsP-GaAs; III-V semiconductors; buried heterostructure laser; fabrication procedure; laser characteristics; reactive ion etching; selective regrowth; semi-insulating regrowth; Aluminum; Etching; Gallium arsenide; Gold; Indium phosphide; Iron; Laboratories; Laser modes; Pump lasers; Scanning electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.557728
  • Filename
    557728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1327875