Threshold Voltage Control by Substrate Bias in 10-nm-Diameter Tri-Gate Nanowire MOSFET on Ultrathin BOX

We investigated the substrate bias effect in 10-nm-diameter tri-gate nanowire (NW) MOSFETs on ultrathin BOX. By employing a thin BOX of 20 nm and a thin NW body, a large body effect factor was achieved, which is sufficient for wide range V_th control. I_on-I_off adjustment by V_sub of 1 V or -1 V enabled a 13% increase in I_on or a one-order decrease in I_off, respectively. Negative V_sub could enlarge SRAM noise margin. Thus, a tri-gate NW MOSFET on ultrathin BOX is potential advantage for low power operation by adopting dynamic power and performance management.